Advances in Silicon Carbide Electronics

Silicon Nitride and Silicon Carbide

Boron carbide/n-silicon carbide heterojunction diodes

Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics

In recent years, the field of Terahertz (THz) science and technology has entered a completely new phase of unprecedented expansion that is generating ever-growing levels of broadbased international attention. Indeed, the plethora of activities that have arisen recently in both the technology and scientific arenas associated with the THz frequency domain i.e., between 1 millimeter (300 GHz) and ...

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.

Silicon Carbide Neutron Detectors

The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...